Electrical characterization of N- and P-doped hole and electron only organic devices

Tae Jin Park; Sun Young Kim; Woo Sik Jeon; Jung Joo Park; Ramchandra Pode; Jin Jang; Jang Hyuk Kwon

doi:10.1166/jnn.2008.1434

Electrical characterization of N- and P-doped hole and electron only organic devices

J Nanosci Nanotechnol. 2008 Oct;8(10):5606-9. doi: 10.1166/jnn.2008.1434.

Authors

Tae Jin Park¹, Sun Young Kim, Woo Sik Jeon, Jung Joo Park, Ramchandra Pode, Jin Jang, Jang Hyuk Kwon

Affiliation

¹ Advanced Display Research Center and Department of Information Display, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea.

PMID: 19198509
DOI: 10.1166/jnn.2008.1434

Abstract

We have fabricated a series of hole only devices with tungsten oxide (WO3) and molybdenum oxide (MoO3) n-doping materials in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transport layer, and electron only devices with CsF and Cs2CO3 p-doping materials in 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transport layer. Current-voltage characteristics and conductivity of these devices are investigated. The optimal conditions for ohmic injection and low resistance properties, and process margins of each dopant are reported in this paper.