Scanning tunneling potentiometry (STP) is a powerful tool to analyze the conductance through thin conducting layers with lateral resolution in the nanometer range. In this work, we show how a commercial ultrahigh vacuum multiprobe system, equipped with four independent tips, can be used to perform STP experiments. Two tips are gently pushed into the surface applying a lateral current through the layer of interest. Simultaneously, the topography and the potential distribution across the metal film are measured with a third tip. The signal-to-noise ratio of the potentiometry signal may be enhanced by using a fourth tip, providing a reference potential in close vicinity of the studied area. Two different examples are presented. For epitaxial (111) oriented Bi films, grown on a Si(100)-(2 x 1) surface, an almost constant gradient of the potential as well as potential drops at individual Bi-domain boundaries were observed. On the surface of the Si(111)(3 x 3)-Ag superstructure the potential variation at individual monoatomic steps could be precisely resolved.