Electrolyte gating in redox-active tunneling junctions--an electrochemical STM approach

J Am Chem Soc. 2008 Nov 26;130(47):16045-54. doi: 10.1021/ja8054194.

Abstract

We report on the construction of an asymmetric tunneling junction between a Au STM tip and a Au(111)-(1 x 1) substrate electrode modified with the redox-active molecule N-hexyl-N'-(6-thiohexyl)-4,4'-bipyridinium bromide (HS6V6) in an electrochemical environment. The experiments focused on the reversible one-electron transfer reaction between the viologen dication V(2+) and the radical cation V(+*). Employing the concept of "electrolyte gating" we demonstrate transistor- and diodelike behavior based on in situ scanning tunneling spectroscopy at constant or variable bias voltages. We derived criteria and verified that the experimental data could be represented quantitatively by a model assuming a two-step electron transfer with partial vibrational relaxation. The analysis illustrates that the magnitude of the tunneling enhancement depends on the initial redox state of HS6V6 (V(2+) or V(+*)). Characteristic parameters, such as reorganization energy, potential drop, and overpotential across the tunneling gap were estimated and discussed. We present a clear discrimination between the redox-mediated enhanced and the off-resonance tunneling currents I(enh) respective I(T) and distinguish between electron transfer in symmetric and asymmetric Au | redox-molecule | Au configurations.