Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well

Phys Rev Lett. 2008 Jul 4;101(1):016805. doi: 10.1103/PhysRevLett.101.016805. Epub 2008 Jul 2.

Abstract

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.