Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection

Opt Express. 2008 Jun 23;16(13):9365-71. doi: 10.1364/oe.16.009365.

Abstract

We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Computer Simulation
  • Crystallization / methods*
  • Equipment Design
  • Equipment Failure Analysis
  • Germanium / chemistry*
  • Light
  • Models, Theoretical*
  • Photometry / instrumentation*
  • Scattering, Radiation
  • Semiconductors*
  • Sensitivity and Specificity
  • Silicon / chemistry*

Substances

  • Germanium
  • Silicon