Deposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation

M Alvisi; G De Nunzio; M Di Giulio; M C Ferrara; M R Perrone; L Protopapa; L Vasanelli

doi:10.1364/ao.38.001237

Deposition of SiO2 films with high laser damage thresholds by ion-assisted electron-beam evaporation

Appl Opt. 1999 Mar 1;38(7):1237-43. doi: 10.1364/ao.38.001237.

Authors

M Alvisi¹, G De Nunzio, M Di Giulio, M C Ferrara, M R Perrone, L Protopapa, L Vasanelli

Affiliation

¹ Istituto Nazionale di Fisica della Materia, Università di Lecce, 73100 Lecce, Italy.

PMID: 18305738
DOI: 10.1364/ao.38.001237

Abstract

SiO(2) thin films (approximately 100 nm thick) with transmittivity and a laser damage threshold nearly equal to those of bulk material are deposited on silica substrates by the technique of ion-assisted electron-beam evaporation. The influence of film packing density on the laser damage threshold is investigated by the technique of photoacoustic probe beam deflection. It is shown that films with lower packing density may have a higher laser damage threshold and as a consequence better heat dissipation.