Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer

Haohai Yu; Huaijin Zhang; Zhengping Wang; Jiyang Wang; Yonggui Yu; Minhua Jiang; Dingyuan Tang; Guoqiang Xie; Hang Luo

doi:10.1364/ol.33.000225

Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer

Opt Lett. 2008 Feb 1;33(3):225-7. doi: 10.1364/ol.33.000225.

Authors

Haohai Yu¹, Huaijin Zhang, Zhengping Wang, Jiyang Wang, Yonggui Yu, Minhua Jiang, Dingyuan Tang, Guoqiang Xie, Hang Luo

Affiliation

¹ State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.

PMID: 18246136
DOI: 10.1364/ol.33.000225

Abstract

We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.