Self-aligned charge read-out for InAs nanowire quantum dots

Nano Lett. 2008 Feb;8(2):382-5. doi: 10.1021/nl072522j. Epub 2008 Jan 16.

Abstract

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact that is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Arsenicals / chemistry*
  • Electric Wiring
  • Electrochemistry / instrumentation*
  • Electrochemistry / methods
  • Equipment Design
  • Equipment Failure Analysis
  • Indium / chemistry*
  • Lighting / instrumentation*
  • Lighting / methods
  • Molecular Conformation
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure
  • Quantum Dots*
  • Static Electricity*

Substances

  • Arsenicals
  • Indium
  • indium arsenide