Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Appl Opt. 2007 Aug 10;46(23):5974-8. doi: 10.1364/ao.46.005974.

Abstract

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.