Evidence of a pressure-induced metallization process in monoclinic VO2

Phys Rev Lett. 2007 May 11;98(19):196406. doi: 10.1103/PhysRevLett.98.196406. Epub 2007 May 10.

Abstract

Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P* approximately 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P >P*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.