Abstract
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.
Publication types
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Research Support, Non-U.S. Gov't
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Research Support, U.S. Gov't, Non-P.H.S.
MeSH terms
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Carbon / chemistry*
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Crystallization / methods*
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Electric Conductivity
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Electrochemistry / instrumentation*
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Electrochemistry / methods
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Equipment Design
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Equipment Failure Analysis
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Macromolecular Substances / chemistry
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Materials Testing
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Molecular Conformation
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Nanotechnology / instrumentation*
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Nanotechnology / methods
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Nanotubes / chemistry*
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Nanotubes / ultrastructure*
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Particle Size
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Surface Properties
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Transistors, Electronic*
Substances
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Macromolecular Substances
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Carbon