Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Nano Lett. 2007 Jun;7(6):1469-73. doi: 10.1021/nl070133j. Epub 2007 Apr 27.

Abstract

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Carbon / chemistry*
  • Crystallization / methods*
  • Electric Conductivity
  • Electrochemistry / instrumentation*
  • Electrochemistry / methods
  • Equipment Design
  • Equipment Failure Analysis
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size
  • Surface Properties
  • Transistors, Electronic*

Substances

  • Macromolecular Substances
  • Carbon