Use of quantum-point-contact high-electron-mobility-transistors for time domain multiplexing of large arrays of high impedance low temperature bolometers

S J C Yates; A Benoit; E Grémion; Ch Ulysse; Ph Camus; A Cavanna; T Durand; B Etienne; U Gennser; C Hoffmann; S Leclercq; Y Jin

doi:10.1063/1.2712912

Use of quantum-point-contact high-electron-mobility-transistors for time domain multiplexing of large arrays of high impedance low temperature bolometers

Rev Sci Instrum. 2007 Mar;78(3):035104. doi: 10.1063/1.2712912.

Authors

S J C Yates¹, A Benoit, E Grémion, Ch Ulysse, Ph Camus, A Cavanna, T Durand, B Etienne, U Gennser, C Hoffmann, S Leclercq, Y Jin

Affiliation

¹ CNRS-CRTBT, 25 Rue des Martyrs, Boîte Postale 166, 38042 Grenoble Cedex 9, France. s.yates@sron.nl

PMID: 17411214
DOI: 10.1063/1.2712912

Abstract

The use of a multiplexing readout for an array of bolometers simplifies the electronics and wiring, so making the readout of large arrays of bolometers (>100) feasible. Here we describe a time domain multiplexing technique and its performance based on the use of quantum-point-contact high-electron-mobility-transistors as low temperature (to approximately 100 mK) switches for measuring high impedance (5...70 MOmega) resistances and sensors. The presented system is well matched to ground based millimetric astronomy demands.

Publication types

Research Support, Non-U.S. Gov't