Sensitivity and dynamic range of FGMOS dosemeters

P J McNulty; Kelvin F Poole; M Crissler; J Reneau; G Cellere; A Paccagnella; A Visconti; M Bonanomi; Dave Stroebel; Michael Fennell; Roger Perez

doi:10.1093/rpd/ncl487

Sensitivity and dynamic range of FGMOS dosemeters

Radiat Prot Dosimetry. 2006;122(1-4):460-2. doi: 10.1093/rpd/ncl487. Epub 2007 Mar 26.

Authors

P J McNulty¹, Kelvin F Poole, M Crissler, J Reneau, G Cellere, A Paccagnella, A Visconti, M Bonanomi, Dave Stroebel, Michael Fennell, Roger Perez

Affiliation

¹ Clemson University, Clemson, SC 29634-0978, USA. mpeter@clemson.edu

PMID: 17387126
DOI: 10.1093/rpd/ncl487

Abstract

UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.

Publication types

Evaluation Study

MeSH terms

Dose-Response Relationship, Radiation
Equipment Design
Equipment Failure Analysis
Miniaturization
Nanotechnology / instrumentation*
Nanotechnology / methods
Radiation Dosage
Radiometry / instrumentation*
Radiometry / methods
Reproducibility of Results
Sensitivity and Specificity
Transistors, Electronic*