Electroluminescence associated with impact excitation or ionization of deep Cr(2+) impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 microm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.