2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V(-1) s(-1)

Kazuo Takimiya; Hideaki Ebata; Katsuhiro Sakamoto; Takafumi Izawa; Tetsuo Otsubo; Yoshihito Kunugi

doi:10.1021/ja064052l

2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V(-1) s(-1)

J Am Chem Soc. 2006 Oct 4;128(39):12604-5. doi: 10.1021/ja064052l.

Authors

Kazuo Takimiya¹, Hideaki Ebata, Katsuhiro Sakamoto, Takafumi Izawa, Tetsuo Otsubo, Yoshihito Kunugi

Affiliation

¹ Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan.

PMID: 17002327
DOI: 10.1021/ja064052l

Abstract

Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.