Photoluminescence study of sexithiophene thin films

Anahita Mani; Joop Schoonman; Albert Goossens

doi:10.1021/jp045916x

Photoluminescence study of sexithiophene thin films

J Phys Chem B. 2005 Mar 24;109(11):4829-36. doi: 10.1021/jp045916x.

Authors

Anahita Mani¹, Joop Schoonman, Albert Goossens

Affiliation

¹ Delft University of Technology, Laboratory for Inorganic Chemistry, P.O. Box 5045, 2600 GA Delft, The Netherlands. a.mani@tnw.tudelft.nl

PMID: 16863136
DOI: 10.1021/jp045916x

Abstract

To determine the exciton diffusion length of sexithiophene (6T) thin films, quenching of the photoluminescence (PL) of vacuum-deposited 6T films on TiO2 and on quartz has been investigated. For films with a thickness of more than 22 nm and at temperatures below 100 K, additional PL lines appear in luminescence spectra. This feature is related to the structural properties of 6T films. The PL intensity is thermally activated with an activation energy of 18 meV on TiO2 and 6 meV on quartz. When 6T is applied on TiO2, exciton quenching occurs for films up to 120 nm. For 6T on quartz this value is reduced to 60 nm. By comparing the relative luminescence intensities of 6T on quartz and on TiO2 substrates, an exciton diffusion length of 60 +/- 5 nm is derived.