Reflectance measurements and optical constants in the extreme ultraviolet-vacuum ultraviolet regions for SiC with a different C/Si ratio

Appl Opt. 2006 Aug 1;45(22):5642-50. doi: 10.1364/ao.45.005642.

Abstract

Reflectance versus incidence angle measurements have been performed from 5 to 152 nm on samples of SiC with a different C/Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.