Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thin-film transistors

Hakan Usta; Gang Lu; Antonio Facchetti; Tobin J Marks

doi:10.1021/ja062908g

Dithienosilole- and dibenzosilole-thiophene copolymers as semiconductors for organic thin-film transistors

J Am Chem Soc. 2006 Jul 19;128(28):9034-5. doi: 10.1021/ja062908g.

Authors

Hakan Usta¹, Gang Lu, Antonio Facchetti, Tobin J Marks

Affiliation

¹ Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

PMID: 16834367
DOI: 10.1021/ja062908g

Abstract

The synthesis and physicochemical properties of a new class of thiophene/arenesilole-containing pi-conjugated polymers are reported. Examples of this new polymer class include the following: poly(2,5-bis(3',3' '-dihexylsilylene-2',2' '-bithieno)thiophene) (TS6T1), poly(2,5'-bis(3' ',3' ''-dihexylsilylene-2' ',2' ''-bithieno)bithiophene) (TS6T2), poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)thiophene) (BS8T1), and poly(2,5'-bis(2' ',2' ''-dioctylsilylene-1' ',1' ''-biphenyl)bithiophene) (BS8T2). Organic field-effect transistors (OFETs) with hole carrier mobilities as high as 0.02-0.06 cm2/V s in air, low turn-on voltages, and current on/off ratios >105-106 are fabricated using solution processing techniques with the above polymers as the active channel layer. OFETs based on this polymer class exhibit excellent ambient operational stability.