Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Hossam Haick; Patrick T Hurley; Allon I Hochbaum; Peidong Yang; Nathan S Lewis

doi:10.1021/ja056785w

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

J Am Chem Soc. 2006 Jul 19;128(28):8990-1. doi: 10.1021/ja056785w.

Authors

Hossam Haick¹, Patrick T Hurley, Allon I Hochbaum, Peidong Yang, Nathan S Lewis

Affiliation

¹ Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, 1200 East California Boulevard, Pasadena, California 91125, USA.

PMID: 16834345
DOI: 10.1021/ja056785w

Abstract

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (+/-2 V).