Resonant intrinsic spin hall effect in p-type GaAs quantum well structure

Phys Rev Lett. 2006 Mar 3;96(8):086802. doi: 10.1103/PhysRevLett.96.086802. Epub 2006 Mar 1.

Abstract

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.