Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors

Ping Liu; Yiliang Wu; Yuning Li; Beng S Ong; Shiping Zhu

doi:10.1021/ja060620l

Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors

J Am Chem Soc. 2006 Apr 12;128(14):4554-5. doi: 10.1021/ja060620l.

Authors

Ping Liu¹, Yiliang Wu, Yuning Li, Beng S Ong, Shiping Zhu

Affiliation

¹ Materials Design & Integration Laboratory, Xerox Research Centre of Canada, Mississauga, Ontario, Canada.

PMID: 16594675
DOI: 10.1021/ja060620l

Abstract

A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.