n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups

Shinji Ando; Ryo Murakami; Jun-ichi Nishida; Hirokazu Tada; Youji Inoue; Shizuo Tokito; Yoshiro Yamashita

doi:10.1021/ja055686f

n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups

J Am Chem Soc. 2005 Nov 2;127(43):14996-7. doi: 10.1021/ja055686f.

Authors

Shinji Ando¹, Ryo Murakami, Jun-ichi Nishida, Hirokazu Tada, Youji Inoue, Shizuo Tokito, Yoshiro Yamashita

Affiliation

¹ Department of Electronic Chemistry, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8502, Japan.

PMID: 16248617
DOI: 10.1021/ja055686f

Abstract

Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.