Investigation of high power effects on Ti/Al and Ta-Si-N/Cu/Ta-Si-N electrodes for SAW devices

Marcela Pekarcíková; Matthias Hofmann; Siegfried Menzel; Hagen Schmidt; Thomas Gemming; Klaus Wetzig

doi:10.1109/tuffc.2005.1503977

Investigation of high power effects on Ti/Al and Ta-Si-N/Cu/Ta-Si-N electrodes for SAW devices

IEEE Trans Ultrason Ferroelectr Freq Control. 2005 May;52(5):911-7. doi: 10.1109/tuffc.2005.1503977.

Authors

Marcela Pekarcíková¹, Matthias Hofmann, Siegfried Menzel, Hagen Schmidt, Thomas Gemming, Klaus Wetzig

Affiliation

¹ Leibniz Institute for Solid State and Materials Research Dresden, Dresden, Germany. m.pekarcikova@ifw-dresden.de

PMID: 16048192
DOI: 10.1109/tuffc.2005.1503977

Abstract

Damage behavior of two different metallization systems (Ti/Al bilayer and Ta-Si-N/Cu/Ta-Si-N multilayer) as finger electrodes in surface acoustic waves (SAW) devices was investigated. A special test structure was developed for this reason. The samples were loaded with traveling SAWs varying input power and loading time. Simultaneously during these experiments, the electric behavior of the SAW structure was measured and damage development by voids and hillock formation was observed using optical microscopy, too. The damaged structures were investigated by means of different microscopy techniques. Results show that the Cu-based metallization system has a significantly higher acoustomigration resistance and power durability in comparison with the Al thin film system.