Analysis of ALD-processed thin films by ion-beam techniques

Matti Putkonen; Timo Sajavaara; Lauri Niinistö; Juhani Keinonen

doi:10.1007/s00216-005-3365-3

Analysis of ALD-processed thin films by ion-beam techniques

Anal Bioanal Chem. 2005 Aug;382(8):1791-9. doi: 10.1007/s00216-005-3365-3. Epub 2005 Jul 14.

Authors

Matti Putkonen¹, Timo Sajavaara, Lauri Niinistö, Juhani Keinonen

Affiliation

¹ Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland.

PMID: 16021420
DOI: 10.1007/s00216-005-3365-3

Abstract

This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).

Publication types

Review

MeSH terms

Ions
Membranes, Artificial*
Nanotechnology / methods*
Spectrum Analysis / methods*

Substances

Ions
Membranes, Artificial