Bend loss effects can be a significant concern in the design and performance of diffused, buried waveguide devices. Since diffused, buried waveguides typically do not have analytical mode solutions, the bend mode must be expressed as an expansion of straight waveguide modes. For the case of buried ion-exchanged waveguides, the bend loss is affected by bend radius, the duration of the ion exchange and burial processes, as well as the size of the mask opening used to create the waveguides and applied field during burial. The bend loss effects for each of these variables are explored under typical fabrication conditions.