Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior

Nano Lett. 2005 Mar;5(3):479-82. doi: 10.1021/nl047947+.

Abstract

Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes of quantum structures, uncovered adsorbed nanocrystals or buried via epitaxical overgrowth, is successfully demonstrated through structural and optical studies. The combination InGaAs/GaAs epitaxical structures and InAs nanocrystals is employed as a vehicle with the functional aim of exploiting the well developed optoelectronic communication technology based on the former with the biochemical and biomedical applications for which the latter are well suited.

Publication types

  • Evaluation Study
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Arsenicals / analysis
  • Arsenicals / chemistry*
  • Crystallization / methods*
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / analysis
  • Gallium / chemistry*
  • Indium / analysis
  • Indium / chemistry*
  • Macromolecular Substances / analysis
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanostructures / analysis
  • Nanostructures / chemistry*
  • Nanostructures / ultrastructure*
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Optics and Photonics / instrumentation*
  • Particle Size
  • Quantum Dots
  • Semiconductors
  • Systems Integration

Substances

  • Arsenicals
  • Macromolecular Substances
  • Indium
  • gallium arsenide
  • Gallium
  • indium arsenide