Preparation of GaN-based cross-sectional TEM specimens by laser lift-off

Li Zilan; Hu Xiaodong; Chen Ke; Nie Ruijuan; Luo Xuhui; Zhang Xiaoping; Yu Tongjun; Zhang Bei; Chen Song; Yang Zhijian; Chen Zhizhong; Zhang Guoyi

doi:10.1016/j.micron.2004.12.001

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off

Micron. 2005;36(3):281-4. doi: 10.1016/j.micron.2004.12.001. Epub 2005 Jan 22.

Authors

Li Zilan¹, Hu Xiaodong, Chen Ke, Nie Ruijuan, Luo Xuhui, Zhang Xiaoping, Yu Tongjun, Zhang Bei, Chen Song, Yang Zhijian, Chen Zhizhong, Zhang Guoyi

Affiliation

¹ State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China. zealan@water.pku.edu.cn

PMID: 15725598
DOI: 10.1016/j.micron.2004.12.001

Abstract

Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and the changes in structural quality are confined to approximately the first 250 nm of the epilayer. Clear TEM images of the whole epilayer and the InGaN quantum wells and the HRTEM images of the superlattice layer are demonstrated, showing that LLO is a quick and ideal method to study the crystal structure of the epilayer, especially if only the upper layers are of interest.