Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy
J Synchrotron Radiat
.
1999 May 1;6(Pt 3):500-2.
doi: 10.1107/S0909049598015581.
Epub 1999 May 1.
Authors
J A Gupta
,
J C Woicik
,
S P Watkins
,
D A Harrison
,
E D Crozier
,
B A Karlin
PMID:
15263359
DOI:
10.1107/S0909049598015581
No abstract available