Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD

Gilles Cibiel; Myrianne Régis; Olivier Llopis; Abdelali Rennane; Laurent Bary; Robert Plana; Yann Kersalé; Vincent Giordano

doi:10.1109/tuffc.2004.1268465

Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD

IEEE Trans Ultrason Ferroelectr Freq Control. 2004 Jan;51(1):33-41. doi: 10.1109/tuffc.2004.1268465.

Authors

Gilles Cibiel¹, Myrianne Régis, Olivier Llopis, Abdelali Rennane, Laurent Bary, Robert Plana, Yann Kersalé, Vincent Giordano

Affiliation

¹ Laboratory of Analyse and Architecture of Systems, National Center of Scientific Research (LAAS-CNRS), Toulouse, France. gcibiel@laas.fr

PMID: 14995014
DOI: 10.1109/tuffc.2004.1268465

Abstract

In this paper, the electrical and noise performances of a 0.8 microm silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded QL factor of 75,000.