Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding

Hideki Yokoi; Tetsuya Mizumoto; Yuya Shoji

doi:10.1364/ao.42.006605

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding

Appl Opt. 2003 Nov 20;42(33):6605-12. doi: 10.1364/ao.42.006605.

Authors

Hideki Yokoi¹, Tetsuya Mizumoto, Yuya Shoji

Affiliation

¹ Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan. yokoi@wave.pe.titech.ac.jp

PMID: 14658461
DOI: 10.1364/ao.42.006605

Abstract

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding are proposed. The optical nonreciprocal devices are composed of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure. Nonreciprocal characteristics are obtained by an evanescent field penetrating into the upper magnetic garnet cladding layer. Several kinds of the optical nonreciprocal device are investigated with the magneto-optic waveguide and designed at a wavelength of 1.55 microm. As a preliminary experiment, wafer bonding between Gd3Ga5O12 and Si was studied. Wafer bonding was successfully achieved with heat treatment at 220 degrees C in H2 ambient.