The step period (Lambda) of vicinal surfaces can be used as a new parameter for the control of metallic heteroepitaxial growth. This is evidenced here in the case of Ag/Cu(211). The deposition of 1 monolayer (ML) exhibits a c(2 x 10) superstructure leading to the formation of [111] steps in the Ag adlayer in contrast with the original [100] steps for the Cu substrate. This wetting layer can be viewed as a (133) Ag plane and it will be the starting point for the epitaxial growth. The deposition of 4 ML shows that the thin Ag film results homogeneous and no twins or stacking faults are detected. Moreover, the film grows along the [133] axis which is the orientation that minimizes the misfit between Cu(211) and the Ag film. Thus, the use of a regular stepped substrate allows one to select the crystallographic orientation of the growth and seems to be a way to avoid the creation of stacking faults.