Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):325-32. doi: 10.1166/jnn.2002.092.

Abstract

The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.

Publication types

  • Evaluation Study
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Aluminum / chemistry*
  • Amplifiers, Electronic
  • Crystallization / methods*
  • Electrochemistry / instrumentation
  • Electrochemistry / methods
  • Electrons
  • Equipment Design
  • Equipment Failure Analysis / methods
  • Gallium / chemistry*
  • Materials Testing / methods
  • Miniaturization
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Transistors, Electronic*

Substances

  • gallium nitride
  • Gallium
  • Aluminum