Abstract
The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
Publication types
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Evaluation Study
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Research Support, U.S. Gov't, Non-P.H.S.
MeSH terms
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Aluminum / chemistry*
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Amplifiers, Electronic
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Crystallization / methods*
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Electrochemistry / instrumentation
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Electrochemistry / methods
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Electrons
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Equipment Design
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Equipment Failure Analysis / methods
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Gallium / chemistry*
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Materials Testing / methods
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Miniaturization
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Nanotechnology / instrumentation*
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Nanotechnology / methods
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Transistors, Electronic*
Substances
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gallium nitride
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Gallium
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Aluminum