High resolution EELS using monochromator and high performance spectrometer: comparison of V2O5 ELNES with NEXAFS and band structure calculations

D S Su; H W Zandbergen; P C Tiemeijer; G Kothleitner; M Hävecker; C Hébert; A Knop-Gericke; B H Freitag; F Hofer; R Schlögl

doi:10.1016/s0968-4328(03)00033-7

High resolution EELS using monochromator and high performance spectrometer: comparison of V2O5 ELNES with NEXAFS and band structure calculations

Micron. 2003;34(3-5):235-8. doi: 10.1016/s0968-4328(03)00033-7.

Authors

D S Su¹, H W Zandbergen, P C Tiemeijer, G Kothleitner, M Hävecker, C Hébert, A Knop-Gericke, B H Freitag, F Hofer, R Schlögl

Affiliation

¹ Department of Inorganic Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, D-14195 Berlin, Germany. dangsheng@fhi-berlin.mpg.de

PMID: 12895495
DOI: 10.1016/s0968-4328(03)00033-7

Abstract

Using single crystal V2O5 as a sample, we tested the performance of the new aberration corrected GATAN spectrometer on a monochromatised 200 kV FEG FEI (S)TEM. The obtained V L and O K ELNES were compared with that obtained in a common GATAN GIF and that in the new spectrometer, without monochromatised beam. The performance of the new instrumentation is impressive: recorded with an energy-resolution of 0.22 eV, the V L(3) edge reveals all the features due to the bulk electronic structure, that are also revealed in near-edge X-ray absorption fine structure (NEXAFS) with a much higher energy-resolution (0.08 eV). All features of the ELNES and NEXAFS are in line with a theoretical spectrum derived from band-structure calculations.