Conductivity and field effect transistor of La2@C80 metallofullerene

Shin-ichiro Kobayashi; Satoshi Mori; Satoru Iida; Hiroaki Ando; Taishi Takenobu; Yasujiro Taguchi; Akihiko Fujiwara; Atsushi Taninaka; Hisanori Shinohara; Yoshihiro Iwasa

doi:10.1021/ja034944a

Conductivity and field effect transistor of La2@C80 metallofullerene

J Am Chem Soc. 2003 Jul 9;125(27):8116-7. doi: 10.1021/ja034944a.

Authors

Shin-ichiro Kobayashi¹, Satoshi Mori, Satoru Iida, Hiroaki Ando, Taishi Takenobu, Yasujiro Taguchi, Akihiko Fujiwara, Atsushi Taninaka, Hisanori Shinohara, Yoshihiro Iwasa

Affiliation

¹ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

PMID: 12837077
DOI: 10.1021/ja034944a

Abstract

We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 x 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.