Barrier layers for Cu-metallization in surface acoustic wave (SAW) devices were investigated by AES and SIMS depth profiles. Two layered systems on LiNbO(3) substrate have been analyzed after annealing in air up to 400 degrees C. The investigated systems were (A) Ta(20 nm)/Cu(150 nm)/Ti(30 nm), deposited by electron beam evaporation, and (B) Ta(30)Si(18)N(52)(50 nm)/Cu(150 nm)/Ta(30)Si(18)N(52)(50 nm) deposited by magnetron sputtering. In system A the Ta layer shows oxidation in air for T>or=300 degrees C. Ti from the buffer layer diffuses into the Cu at about 100 degrees C, and segregates at the Ta/Cu interface for T>or=200 degrees C. Oxidation of the Ti layer starts at 300 degrees C. But no remarkable amounts of oxygen could be found in the Cu film. The depth profiles show that the TaSiN layer in system B operates as a more effective barrier for the Cu-SAW technology up to more than 300 degrees C.