p(2x2) phase of buckled dimers of Si(100) observed on n-type substrates below 40 K by scanning tunneling microscopy

Kenji Hata; Shoji Yoshida; Hidemi Shigekawa

doi:10.1103/PhysRevLett.89.286104

p(2x2) phase of buckled dimers of Si(100) observed on n-type substrates below 40 K by scanning tunneling microscopy

Phys Rev Lett. 2002 Dec 31;89(28 Pt 1):286104. doi: 10.1103/PhysRevLett.89.286104. Epub 2002 Dec 30.

Authors

Kenji Hata¹, Shoji Yoshida, Hidemi Shigekawa

Affiliation

¹ Institute of Applied Physics, 21st Century COE, University of Tsukuba, Tsukuba 305-8573, Japan. khata@cmliris.harvard.edu

PMID: 12513167
DOI: 10.1103/PhysRevLett.89.286104

Abstract

We have investigated the basic surface reconstruction of Si(100) on well defined surfaces fabricated on various substrates at low temperatures (-80 K) by scanning tunneling microscopy. Below 40 K, the single p(2x2) phase, a phase never observed before, was observed exclusively on n-type substrates doped in the range of 0.002 to 0.017 Omega cm. We also exclude the possibility of the (2x1) symmetric dimer commonly observed at low temperature (-10 K) being the basic surface reconstruction by showing that a buckled dimer can be flip-flopped by the tunneling tip.