Chromium nitride layers produced by reactive sputtering with different process parameters were characterized with EPMA, SIMS depth profiling, and three-dimensional SIMS imaging. EPMA results are used to quantify the major components of the films while SIMS is used to gather information about the distribution of the elements chromium, silicon, nitrogen, and oxygen. For all measurements a Cs+ primary ion beam was applied to sputter the sample. Positive MCs+ (M represents the element to be analyzed) secondary ions were detected. SIMS depth profiling shows an even distribution of all major elements except oxygen, which shows significant differences in concentration and distribution depending on the process parameters. CrN layers produced at low sputter power have much higher concentration of oxygen than layers produced with high sputter power. Heating the silicon substrate during the process results in an enrichment of oxygen at the interface.