Fabrication of gap-optimized CMUT

IEEE Trans Ultrason Ferroelectr Freq Control. 2002 Sep;49(9):1321-9. doi: 10.1109/tuffc.2002.1041549.

Abstract

A recently introduced set up of capacitive micromachined ultrasonic transducers (cMUT) combines a conductive membrane above a structured sacrificial layer. All previous approaches either require an additional metallic electrode or do not possess a structured sacrificial layer and, consequently, may make exact adjustment of the membrane dimensions difficult. The present set ups are especially suited for the fabrication of cMUT with gap heights ranging between 50 nm and 2 microm between the electrodes. Large gaps are a prerequisite to enabling sufficient deflections of the membrane and, therewith, to generating high pressure gradients. On the other hand, small gap sizes are desirable for detecting weak ultrasonic sources. This paper focuses on the fabrication process of cMUT to realize electrode separation above 500 nm and, in addition, on the manufacturing of cMUT with gaps below 500 nm. The successful realization has been proven by some basic experimental investigations. Finally, the fundamental equations of a frequently chosen simulation model are documented, as a number of ambiguities exist in the common literature.