Spherical growth and surface-quasifree vibrations of Si nanocrystallites in Er-doped Si nanostructures

Phys Rev Lett. 2001 Apr 2;86(14):3000-3. doi: 10.1103/PhysRevLett.86.3000.

Abstract

Si-based Er-doped Si nanostructures were fabricated for exploring efficient light emission from Er ions and Si nanocrystallites. High-resolution transmission electron microscopy observations reveal that Si nanocrystallites are spherically embedded in the SiO2 matrix. Energy-dispersive x-ray analysis indicates that the Er centers are distributed at the surfaces of nanocrystallites surrounded by the SiO2 matrix. Low-frequency Raman scattering investigation shows that Lamb's theory can be adopted to exactly calculate the surface vibration frequencies from acoustic phonons confined in spherical Si nanocrystallites and the matrix effects are negligible.