3He and 2H targets were fabricated through implantation of 3He and 2H ions in 0.2-0.3 mm thick tantalum and titanium foils. The energy of 3He and 2H ions was 45-100 and 78 keV, respectively. Ions beams with typical current of 90-300 microA were used for implantation. Stability tests of 3He and 2H targets were carried out by monitoring the yield of 3He(d, p)4He and 2H(d, p)3H reactions. For the 3He target, the reaction yield was stable for both tantalum and titanium foils but the most stabilized maximum yield was observed for the 100 keV tantalum target. In the case of 2H targets, the yield increased with increasing total dose implanted on the target.