Analysis of SiC fibres and composites using raman microscopy

J Microsc. 1999 Nov;196(# (Pt 2)):257-65. doi: 10.1046/j.1365-2818.1999.00619.x.

Abstract

The application of Raman spectroscopy in the analysis of the microstructure of SCS-6 silicon carbide fibres using a Renishaw Raman microscope is described. It is demonstrated that the technique allows a detailed study to be made of the point-to-point variation in microstructure across a fibre section. It has been possible to monitor the variation of the concentration of SiC and carbon in the fibre microstructure and to detect differences in the forms of carbon present. It is also shown that Raman spectroscopy can be used to follow the micromechanics of both the deformation of silicon carbide fibres and of the fibres within a model composite. Well-defined Raman spectra have been obtained from a variety of Nicalon and Tyranno fibres and the positions of the Raman bands shown to shift on the application of stress or strain. From such stress-induced Raman band shifts, the point-to-point variation of axial fibre stress or strain along an individual fibre in an epoxy matrix can be determined. An example is given of the use of the technique to map the distributions of axial fibre strain in a Nicalon/epoxy fragmentation test specimen and to model the failure processes at the fibre/matrix interface.