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Standards for the Characterization of Endurance in Resistive Switching Devices.
ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3.
ACS Nano. 2021.
PMID: 34730935
Free article.
Review.
Interfacial Metal-Oxide Interactions in Resistive Switching Memories.
Cho DY, Luebben M, Wiefels S, Lee KS, Valov I.
Cho DY, et al. Among authors: wiefels s.
ACS Appl Mater Interfaces. 2017 Jun 7;9(22):19287-19295. doi: 10.1021/acsami.7b02921. Epub 2017 May 30.
ACS Appl Mater Interfaces. 2017.
PMID: 28508634
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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices.
Kopperberg N, Wiefels S, Liberda S, Waser R, Menzel S.
Kopperberg N, et al. Among authors: wiefels s.
ACS Appl Mater Interfaces. 2021 Dec 8;13(48):58066-58075. doi: 10.1021/acsami.1c14667. Epub 2021 Nov 22.
ACS Appl Mater Interfaces. 2021.
PMID: 34808060
Free article.
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Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices.
Stasner P, Kopperberg N, Schnieders K, Hennen T, Wiefels S, Menzel S, Waser R, Wouters DJ.
Stasner P, et al. Among authors: wiefels s.
Nanoscale Horiz. 2024 Apr 29;9(5):764-774. doi: 10.1039/d3nh00520h.
Nanoscale Horiz. 2024.
PMID: 38511616
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