Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.
Summerfield A, Davies A, Cheng TS, Korolkov VV, Cho YJ, Mellor CJ, Foxon CT, Khlobystov AN, Watanabe K, Taniguchi T, Eaves L, Novikov SV, Beton PH.
Summerfield A, et al. Among authors: watanabe k.
Sci Rep. 2016 Jun 2;6:27047. doi: 10.1038/srep27047.
Sci Rep. 2016.
PMID: 27253771
Free PMC article.
No abstract available.