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Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes.
Kafar A, Ishii R, Gibasiewicz K, Matsuda Y, Stanczyk S, Schiavon D, Grzanka S, Tano M, Sakaki A, Suski T, Perlin P, Funato M, Kawakami Y. Kafar A, et al. Among authors: suski t. Opt Express. 2020 Jul 20;28(15):22524-22539. doi: 10.1364/OE.394580. Opt Express. 2020. PMID: 32752512 Free article.
Nitride light-emitting diodes for cryogenic temperatures.
Chlipala M, Turski H, Siekacz M, Pieniak K, Nowakowski-Szkudlarek K, Suski T, Skierbiszewski C. Chlipala M, et al. Among authors: suski t. Opt Express. 2020 Sep 28;28(20):30299-30308. doi: 10.1364/OE.403906. Opt Express. 2020. PMID: 33114912 Free article.
Raman-scattering studies of aluminum nitride at high pressure.
Perlin P, Polian A, Suski T. Perlin P, et al. Among authors: suski t. Phys Rev B Condens Matter. 1993 Feb 1;47(5):2874-2877. doi: 10.1103/physrevb.47.2874. Phys Rev B Condens Matter. 1993. PMID: 10006350 No abstract available.
Towards the identification of the dominant donor in GaN.
Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory I I, Jun J, Porowski S, Boguslawski P, Bernholc J, Chervin JC, Polian A, Moustakas TD. Perlin P, et al. Among authors: suski t. Phys Rev Lett. 1995 Jul 10;75(2):296-299. doi: 10.1103/PhysRevLett.75.296. Phys Rev Lett. 1995. PMID: 10059658 No abstract available.
Barrier between localized and shallow neutral donor states in GaAs:Ge.
Skierbiszewski C, Jantsch W, Wilamowski Z, Lübke K, Suski T. Skierbiszewski C, et al. Among authors: suski t. Phys Rev B Condens Matter. 1995 Nov 15;52(20):14312-14315. doi: 10.1103/physrevb.52.r14312. Phys Rev B Condens Matter. 1995. PMID: 9980747 No abstract available.
25 results