Ren K - Search Results

1

Electrical switching properties and structural characteristics of GeSe-GeTe films.

Ren K , Zhu M , Song W , Lv S , Xia M , Wang Y , Lu Y , Ji Z , Song Z . Ren K , et al. Nanoscale. 2019 Jan 23;11(4):1595-1603. doi: 10.1039/c8nr07832g. Nanoscale. 2019. PMID: 30475356

2

Si-Sb-Te materials for phase change memory applications.

Rao F, Song Z, Ren K, Zhou X, Cheng Y, Wu L, Liu B. Rao F, et al. Among authors: ren k. Nanotechnology. 2011 Apr 8;22(14):145702. doi: 10.1088/0957-4484/22/14/145702. Epub 2011 Feb 24. Nanotechnology. 2011. PMID: 21346305

3

Scandium doping brings speed improvement in Sb₂Te alloy for phase change random access memory application.

Chen X, Zheng Y, Zhu M, Ren K, Wang Y, Li T, Liu G, Guo T, Wu L, Liu X, Cheng Y, Song Z. Chen X, et al. Among authors: ren k. Sci Rep. 2018 May 1;8(1):6839. doi: 10.1038/s41598-018-25215-z. Sci Rep. 2018. PMID: 29717216 Free PMC article.

4

Atomic scale insight into the effects of Aluminum doped Sb₂Te for phase change memory application.

Wang Y, Wang T, Zheng Y, Liu G, Li T, Lv S, Song W, Song S, Cheng Y, Ren K, Song Z. Wang Y, et al. Among authors: ren k. Sci Rep. 2018 Oct 11;8(1):15136. doi: 10.1038/s41598-018-33421-y. Sci Rep. 2018. PMID: 30310138 Free PMC article.

5

Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption.

Wang Y, Guo T, Liu G, Li T, Lv S, Song S, Cheng Y, Song W, Ren K, Song Z. Wang Y, et al. Among authors: ren k. ACS Appl Mater Interfaces. 2019 Mar 20;11(11):10848-10855. doi: 10.1021/acsami.8b22580. Epub 2019 Mar 12. ACS Appl Mater Interfaces. 2019. PMID: 30810295

6

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Xie C, Li X, Chen H, Li Y, Liu Y, Wang Q, Ren K, Song Z. Xie C, et al. Among authors: ren k. Micromachines (Basel). 2019 Jul 8;10(7):461. doi: 10.3390/mi10070461. Micromachines (Basel). 2019. PMID: 31288410 Free PMC article.

7

Crystal-Like Glassy Structure in Sc-Doped BiSbTe Ensuring Excellent Speed and Power Efficiency in Phase Change Memory.

Ren K, Xia M, Zhu S, Wang G, Xin T, Lv S, Song Z. Ren K, et al. ACS Appl Mater Interfaces. 2020 Apr 8;12(14):16601-16608. doi: 10.1021/acsami.0c00476. Epub 2020 Mar 25. ACS Appl Mater Interfaces. 2020. PMID: 32174106

8

Toward the Speed Limit of Phase-Change Memory.

Shen J, Song W, Ren K, Song Z, Zhou P, Zhu M. Shen J, et al. Among authors: ren k. Adv Mater. 2023 Mar;35(11):e2208065. doi: 10.1002/adma.202208065. Epub 2023 Feb 9. Adv Mater. 2023. PMID: 36719053

9

Position selective dielectric polarization enhancement in CNT based heterostructures for highly efficient microwave absorption.

Hu H, Zheng Y, Ren K, Wang J, Zhang Y, Zhang X, Che R, Qin G, Jiang Y. Hu H, et al. Among authors: ren k. Nanoscale. 2021 Feb 4;13(4):2324-2332. doi: 10.1039/d0nr08245g. Nanoscale. 2021. PMID: 33459745

10

Mineralogical phase separation and leaching characteristics of typical toxic elements in Chinese lignite fly ash.

Liu F, Ma S, Ren K, Wang X. Liu F, et al. Among authors: ren k. Sci Total Environ. 2020 Mar 15;708:135095. doi: 10.1016/j.scitotenv.2019.135095. Epub 2019 Nov 20. Sci Total Environ. 2020. PMID: 31812429

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