Radu IP - Search Results

1

Electrically Driven Unidirectional Optical Nanoantennas.

Gurunarayanan SP, Verellen N, Zharinov VS, James Shirley F, Moshchalkov VV, Heyns M, Van de Vondel J, Radu IP, Van Dorpe P. Gurunarayanan SP, et al. Among authors: radu ip. Nano Lett. 2017 Dec 13;17(12):7433-7439. doi: 10.1021/acs.nanolett.7b03312. Epub 2017 Nov 2. Nano Lett. 2017. PMID: 29068692

2

Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation.

Dutta S, Zografos O, Gurunarayanan S, Radu I, Soree B, Catthoor F, Naeemi A. Dutta S, et al. Sci Rep. 2017 Dec 19;7(1):17866. doi: 10.1038/s41598-017-17954-2. Sci Rep. 2017. PMID: 29259222 Free PMC article.

3

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes.

Agarwal TK, Soree B, Radu I, Raghavan P, Iannaccone G, Fiori G, Dehaene W, Heyns M. Agarwal TK, et al. Sci Rep. 2017 Jul 10;7(1):5016. doi: 10.1038/s41598-017-04055-3. Sci Rep. 2017. PMID: 28694459 Free PMC article.

4

Highly efficient and stable MoS₂ FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating.

Lockhart de la Rosa CJ, Nourbakhsh A, Heyne M, Asselberghs I, Huyghebaert C, Radu I, Heyns M, De Gendt S. Lockhart de la Rosa CJ, et al. Nanoscale. 2017 Jan 7;9(1):258-265. doi: 10.1039/c6nr06980k. Epub 2016 Dec 1. Nanoscale. 2017. PMID: 27906404

5

From the metal to the channel: a study of carrier injection through the metal/2D MoS₂ interface.

Arutchelvan G, Lockhart de la Rosa CJ, Matagne P, Sutar S, Radu I, Huyghebaert C, De Gendt S, Heyns M. Arutchelvan G, et al. Nanoscale. 2017 Aug 3;9(30):10869-10879. doi: 10.1039/c7nr02487h. Nanoscale. 2017. PMID: 28731082

6

[No title available]

[No authors listed] [No authors listed] PMID: 33302262

7

Understanding ambipolar transport in MoS₂ field effect transistors: the substrate is the key.

Mootheri V, Leonhardt A, Verreck D, Asselberghs I, Huyghebaert C, de Gendt S, Radu I, Lin D, Heyns M. Mootheri V, et al. Nanotechnology. 2021 Jan 7;32(13):135202. doi: 10.1088/1361-6528/abd27a. Online ahead of print. Nanotechnology. 2021. PMID: 33410418

8

Switching mechanism in two-terminal vanadium dioxide devices.

Radu IP, Govoreanu B, Mertens S, Shi X, Cantoro M, Schaekers M, Jurczak M, De Gendt S, Stesmans A, Kittl JA, Heyns M, Martens K. Radu IP, et al. Nanotechnology. 2015 Apr 24;26(16):165202. doi: 10.1088/0957-4484/26/16/165202. Epub 2015 Mar 27. Nanotechnology. 2015. PMID: 25815433 Free article.

9

Impact of device scaling on the electrical properties of MoS₂ field-effect transistors.

Arutchelvan G, Smets Q, Verreck D, Ahmed Z, Gaur A, Sutar S, Jussot J, Groven B, Heyns M, Lin D, Asselberghs I, Radu I. Arutchelvan G, et al. Sci Rep. 2021 Mar 23;11(1):6610. doi: 10.1038/s41598-021-85968-y. Sci Rep. 2021. PMID: 33758215 Free PMC article.

10

Chemical vapor deposition of monolayer-thin WS₂ crystals from the WF₆ and H₂S precursors at low deposition temperature.

Groven B, Claes D, Nalin Mehta A, Bender H, Vandervorst W, Heyns M, Caymax M, Radu I, Delabie A. Groven B, et al. J Chem Phys. 2019 Mar 14;150(10):104703. doi: 10.1063/1.5048346. J Chem Phys. 2019. PMID: 30876349

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