Radu I - Search Results

1

From the metal to the channel: a study of carrier injection through the metal/2D MoS₂ interface.

Arutchelvan G, Lockhart de la Rosa CJ, Matagne P, Sutar S, Radu I, Huyghebaert C, De Gendt S, Heyns M. Arutchelvan G, et al. Among authors: radu i. Nanoscale. 2017 Aug 3;9(30):10869-10879. doi: 10.1039/c7nr02487h. Nanoscale. 2017. PMID: 28731082

2

Highly efficient and stable MoS₂ FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating.

Lockhart de la Rosa CJ, Nourbakhsh A, Heyne M, Asselberghs I, Huyghebaert C, Radu I, Heyns M, De Gendt S. Lockhart de la Rosa CJ, et al. Among authors: radu i. Nanoscale. 2017 Jan 7;9(1):258-265. doi: 10.1039/c6nr06980k. Epub 2016 Dec 1. Nanoscale. 2017. PMID: 27906404

3

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS₂ Films Grown on SiO₂ by Mo Sulfurization.

Stesmans A, Iacovo S, Chiappe D, Radu I, Huyghebaert C, De Gendt S, Afanas'ev VV. Stesmans A, et al. Among authors: radu i. Nanoscale Res Lett. 2017 Dec;12(1):283. doi: 10.1186/s11671-017-2008-x. Epub 2017 Apr 20. Nanoscale Res Lett. 2017. PMID: 28431460 Free PMC article.

4

Understanding ambipolar transport in MoS₂ field effect transistors: the substrate is the key.

Mootheri V, Leonhardt A, Verreck D, Asselberghs I, Huyghebaert C, de Gendt S, Radu I, Lin D, Heyns M. Mootheri V, et al. Among authors: radu i. Nanotechnology. 2021 Jan 7;32(13):135202. doi: 10.1088/1361-6528/abd27a. Online ahead of print. Nanotechnology. 2021. PMID: 33410418

5

Impact of device scaling on the electrical properties of MoS₂ field-effect transistors.

Arutchelvan G, Smets Q, Verreck D, Ahmed Z, Gaur A, Sutar S, Jussot J, Groven B, Heyns M, Lin D, Asselberghs I, Radu I. Arutchelvan G, et al. Among authors: radu i. Sci Rep. 2021 Mar 23;11(1):6610. doi: 10.1038/s41598-021-85968-y. Sci Rep. 2021. PMID: 33758215 Free PMC article.

6

[No title available]

[No authors listed] [No authors listed] PMID: 33302262

7

Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

Chiappe D, Ludwig J, Leonhardt A, El Kazzi S, Nalin Mehta A, Nuytten T, Celano U, Sutar S, Pourtois G, Caymax M, Paredis K, Vandervorst W, Lin D, De Gendt S, Barla K, Huyghebaert C, Asselberghs I, Radu I. Chiappe D, et al. Among authors: radu i. Nanotechnology. 2018 Oct 19;29(42):425602. doi: 10.1088/1361-6528/aad798. Epub 2018 Aug 2. Nanotechnology. 2018. PMID: 30070657

8

Impact of MoS₂ layer transfer on electrostatics of MoS₂/SiO₂ interface.

Afanas'ev VV, Chiappe D, Perucchini M, Houssa M, Huyghebaert C, Radu I, Stesmans A. Afanas'ev VV, et al. Among authors: radu i. Nanotechnology. 2019 Feb 1;30(5):055702. doi: 10.1088/1361-6528/aaf03f. Epub 2018 Dec 4. Nanotechnology. 2019. PMID: 30511667

9

Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits.

Schram T, Sutar S, Radu I, Asselberghs I. Schram T, et al. Among authors: radu i. Adv Mater. 2022 Dec;34(48):e2109796. doi: 10.1002/adma.202109796. Epub 2022 Sep 7. Adv Mater. 2022. PMID: 36071023

10

Polarity control in WSe2 double-gate transistors.

Resta GV, Sutar S, Balaji Y, Lin D, Raghavan P, Radu I, Catthoor F, Thean A, Gaillardon PE, de Micheli G. Resta GV, et al. Among authors: radu i. Sci Rep. 2016 Jul 8;6:29448. doi: 10.1038/srep29448. Sci Rep. 2016. PMID: 27390014 Free PMC article.

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