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Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask.
Nanomaterials (Basel). 2023 Feb 20;13(4):784. doi: 10.3390/nano13040784.
Nanomaterials (Basel). 2023.
PMID: 36839152
Free PMC article.
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface.
Podlipskas Ž, Jurkevičius J, Kadys A, Miasojedovas S, Malinauskas T, Aleksiejūnas R.
Podlipskas Ž, et al.
Sci Rep. 2019 Nov 22;9(1):17346. doi: 10.1038/s41598-019-53732-y.
Sci Rep. 2019.
PMID: 31757996
Free PMC article.
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Direct Auger recombination and density-dependent hole diffusion in InN.
Aleksiejūnas R, Podlipskas Ž, Nargelas S, Kadys A, Kolenda M, Nomeika K, Mickevičius J, Tamulaitis G.
Aleksiejūnas R, et al. Among authors: podlipskas z.
Sci Rep. 2018 Mar 15;8(1):4621. doi: 10.1038/s41598-018-22832-6.
Sci Rep. 2018.
PMID: 29545555
Free PMC article.
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Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content.
Saxena T, Shur M, Nargelas S, Podlipskas Ž, Aleksiejūnas R, Tamulaitis G, Shatalov M, Yang J, Gaska R.
Saxena T, et al. Among authors: podlipskas z.
Opt Express. 2015 Jul 27;23(15):19646-55. doi: 10.1364/OE.23.019646.
Opt Express. 2015.
PMID: 26367622
Free article.
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