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Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.
Gooth J, Borg M, Schmid H, Schaller V, Wirths S, Moselund K, Luisier M, Karg S, Riel H. Gooth J, et al. Among authors: moselund k. Nano Lett. 2017 Apr 12;17(4):2596-2602. doi: 10.1021/acs.nanolett.7b00400. Epub 2017 Mar 27. Nano Lett. 2017. PMID: 28334529
Vertical III-V nanowire device integration on Si(100).
Borg M, Schmid H, Moselund KE, Signorello G, Gignac L, Bruley J, Breslin C, Das Kanungo P, Werner P, Riel H. Borg M, et al. Nano Lett. 2014;14(4):1914-20. doi: 10.1021/nl404743j. Epub 2014 Mar 19. Nano Lett. 2014. PMID: 24628529
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si.
Borg M, Schmid H, Gooth J, Rossell MD, Cutaia D, Knoedler M, Bologna N, Wirths S, Moselund KE, Riel H. Borg M, et al. ACS Nano. 2017 Mar 28;11(3):2554-2560. doi: 10.1021/acsnano.6b04541. Epub 2017 Feb 27. ACS Nano. 2017. PMID: 28225591
In situ doping of catalyst-free InAs nanowires.
Ghoneim H, Mensch P, Schmid H, Bessire CD, Rhyner R, Schenk A, Rettner C, Karg S, Moselund KE, Riel H, Björk MT. Ghoneim H, et al. Nanotechnology. 2012 Dec 21;23(50):505708. doi: 10.1088/0957-4484/23/50/505708. Epub 2012 Nov 27. Nanotechnology. 2012. PMID: 23187068
23 results