Monemar B - Search Results

1

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs.

Bi Z, Lu T, Colvin J, Sjögren E, Vainorius N, Gustafsson A, Johansson J, Timm R, Lenrick F, Wallenberg R, Monemar B, Samuelson L. Bi Z, et al. Among authors: monemar b. ACS Appl Mater Interfaces. 2020 Apr 15;12(15):17845-17851. doi: 10.1021/acsami.0c00951. Epub 2020 Apr 2. ACS Appl Mater Interfaces. 2020. PMID: 32207292 Free PMC article.

2

InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes.

Bi Z, Lenrick F, Colvin J, Gustafsson A, Hultin O, Nowzari A, Lu T, Wallenberg R, Timm R, Mikkelsen A, Ohlsson BJ, Storm K, Monemar B, Samuelson L. Bi Z, et al. Among authors: monemar b. Nano Lett. 2019 May 8;19(5):2832-2839. doi: 10.1021/acs.nanolett.8b04781. Epub 2019 Apr 12. Nano Lett. 2019. PMID: 30938533

3

Synthesis and Applications of III-V Nanowires.

Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Barrigón E, et al. Among authors: monemar b. Chem Rev. 2019 Aug 14;119(15):9170-9220. doi: 10.1021/acs.chemrev.9b00075. Epub 2019 Aug 6. Chem Rev. 2019. PMID: 31385696

4

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

Storm K, Halvardsson F, Heurlin M, Lindgren D, Gustafsson A, Wu PM, Monemar B, Samuelson L. Storm K, et al. Among authors: monemar b. Nat Nanotechnol. 2012 Nov;7(11):718-22. doi: 10.1038/nnano.2012.190. Epub 2012 Oct 28. Nat Nanotechnol. 2012. PMID: 23103932

5

Crystal phase engineered quantum wells in ZnO nanowires.

Khranovskyy V, Glushenkov AM, Chen Y, Khalid A, Zhang H, Hultman L, Monemar B, Yakimova R. Khranovskyy V, et al. Among authors: monemar b. Nanotechnology. 2013 May 31;24(21):215202. doi: 10.1088/0957-4484/24/21/215202. Epub 2013 Apr 26. Nanotechnology. 2013. PMID: 23619281

6

Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.

Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Moskalenko ES, et al. Among authors: monemar b. Nano Lett. 2007 Jan;7(1):188-93. doi: 10.1021/nl062417u. Nano Lett. 2007. PMID: 17212462

7

Atom probe tomography study of Mg-doped GaN layers.

Khromov S, Gregorius D, Schiller R, Lösch J, Wahl M, Kopnarski M, Amano H, Monemar B, Hultman L, Pozina G. Khromov S, et al. Among authors: monemar b. Nanotechnology. 2014 Jul 11;25(27):275701. doi: 10.1088/0957-4484/25/27/275701. Epub 2014 Jun 24. Nanotechnology. 2014. PMID: 24960447

8

Growth of GaN nanotubes by halide vapor phase epitaxy.

Hemmingsson C, Pozina G, Khromov S, Monemar B. Hemmingsson C, et al. Among authors: monemar b. Nanotechnology. 2011 Feb 25;22(8):085602. doi: 10.1088/0957-4484/22/8/085602. Epub 2011 Jan 17. Nanotechnology. 2011. PMID: 21242622

9

Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots.

Moskalenko ES, Karlsson FK, Donchev VT, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Moskalenko ES, et al. Among authors: monemar b. Nano Lett. 2005 Nov;5(11):2117-22. doi: 10.1021/nl050926a. Nano Lett. 2005. PMID: 16277437

10

Evidence for two Mg related acceptors in GaN.

Monemar B, Paskov PP, Pozina G, Hemmingsson C, Bergman JP, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, Hommel D, Usui A. Monemar B, et al. Phys Rev Lett. 2009 Jun 12;102(23):235501. doi: 10.1103/PhysRevLett.102.235501. Epub 2009 Jun 9. Phys Rev Lett. 2009. PMID: 19658946

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